Published March 5, 2024 | Version v1
Conference paper Open

Low dark current and high responsivity Si-contacted Ge-on-Si avalanche photodetectors in a 300-mm Si photonics platform

Authors/Creators

  • 1. ROR icon IMEC

Description

Abstract: We report the 300-mm wafer-scale performance of Silicon-contacted Ge-on-Si lateral separate
absorption charge multiplication avalanche photodetectors, demonstrating sub-μA dark currents
consistently across the wafer, with responsivities of 6 A/W at 22 GHz bandwidth or 2 A/W at 35 GHz.

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Additional details

Funding

European Commission
SIPHO-G - Advanced GeSi components for next-generation silicon photonics applications 101017194