Journal article Open Access

Mott Memory and Neuromorphic Devices

You Zhou,; Ramanathan, Shriram

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<oai_dc:dc xmlns:dc="" xmlns:oai_dc="" xmlns:xsi="" xsi:schemaLocation="">
  <dc:creator>You Zhou,</dc:creator>
  <dc:creator>Ramanathan, Shriram</dc:creator>
  <dc:description>Orbital occupancy control in correlated oxides
allows the realization of new electronic phases and collective
state switching under external stimuli. The resultant structural
and electronic phase transitions provide an elegant way to
encode, store, and process information. In this review, we examine
the utilization of Mott metal-to-insulator transitions, for
memory and neuromorphic devices. We emphasize the overarching
electron–phonon coupling and electron–electron interaction-
driven transition mechanisms and kinetics, which
renders a general description of Mott memories from aspects
such as nonvolatility, sensing scheme, read/write speed, and
switching energy. Various memory and neuromorphic device
architectures incorporating phase transition elements are
reviewed, focusing on their operational principles. The role of
Peierls distortions and crystal symmetry changes during phase
change is discussed. Prospects for such orbitronic devices as
hardware components for information technologies are
  <dc:title>Mott Memory and Neuromorphic Devices</dc:title>
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