Journal article Open Access

Mott Memory and Neuromorphic Devices

You Zhou,; Ramanathan, Shriram


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{
  "DOI": "10.1109/jproc.2015.2431914", 
  "author": [
    {
      "family": "You Zhou,"
    }, 
    {
      "family": "Ramanathan, Shriram"
    }
  ], 
  "issued": {
    "date-parts": [
      [
        2015, 
        8, 
        1
      ]
    ]
  }, 
  "abstract": "Orbital occupancy control in correlated oxides\nallows the realization of new electronic phases and collective\nstate switching under external stimuli. The resultant structural\nand electronic phase transitions provide an elegant way to\nencode, store, and process information. In this review, we examine\nthe utilization of Mott metal-to-insulator transitions, for\nmemory and neuromorphic devices. We emphasize the overarching\nelectron\u2013phonon coupling and electron\u2013electron interaction-\ndriven transition mechanisms and kinetics, which\nrenders a general description of Mott memories from aspects\nsuch as nonvolatility, sensing scheme, read/write speed, and\nswitching energy. Various memory and neuromorphic device\narchitectures incorporating phase transition elements are\nreviewed, focusing on their operational principles. The role of\nPeierls distortions and crystal symmetry changes during phase\nchange is discussed. Prospects for such orbitronic devices as\nhardware components for information technologies are\nsummarized.", 
  "title": "Mott Memory and Neuromorphic Devices", 
  "type": "article-journal", 
  "id": "895565"
}
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