Red Emissive Aie Luminogens with High Hole-transporting Properties for Efficient Non-doped Oleds

Fig. S1 Emission spectra of (A) TTB and (B) TNB in solvents with different polarities. Excitation wavelength: 470 nm. Table S1 Absorption and emission of TTB and TNB in different solvents. Table S2 Optical, electronic and thermal properties of TTB and TNB. Fig. S2 Time-resolved fluorescence decay curves of (A) TTB and (B) TNB in solid state at room temperature. Fig. S3 Cyclic voltammograms of (A) TTB and (B) TNB measured in dichloromethane containing 0.1 M tetra-n-butylammonium hexafluorophosphate. Scan rate = 100 mV/s. Fig. S4 (A) TGA thermograms and (B) DSC curves of TTB and TNB recorded during the second heating cycle at a rate of 10 °C /min.


Table of Contents
Experimental section Fig. S1 Emission spectra of (A) TTB and (B) TNB in solvents with different polarities.Excitation wavelength: 470 nm.
Table S1 Absorption and emission of TTB and TNB in different solvents.
Table S2 Optical, electronic and thermal properties of TTB and TNB.

Materials and Instrumentations
TTB and TNB were prepared according to the reported experimental procedures. 1 All the solvents and chemicals were purchased from Aldrich and used as received without further purification.UV spectra were measured on a Milton Roy 5 Spectronic 3000 Array spectrophotometer.Photoluminescence spectra were recorded on a Perkin-Elmer LS 55 spectrofluorometer.Time-resolved fluorescence decay curves of TTB and TNB were measured using an Edinburgh FLSP920 spectrophotometer equipped with a 450 nm picosecond pulsed diode laser (EPL-450, 5 mW) at room temperature.Their thermal stabilities were evaluated on TGA Q5000 and DSC Q1000 instruments under nitrogen at a heating rate of 10 °C/min.Cyclic voltammetry (CV) experiments were carried out in dichloromethane solution with 0.1 M tetrabutylammonium hexafluorophosphate (n-Bu 4 NPF 6 ) as the supporting electrolyte at a scan rate of 100 mV/s by using Ag/AgNO 3 as the working electrode and saturated calomel electrode (SCE) as the reference electrode.

Device fabrication
The devices were fabricated on 80 nm ITO-coated glass with a sheet resistance of 25 Ω per square.Before loading into the pretreatment chamber, the ITO-coated glasses were soaked in ultrasonic detergent for 0.5 h, followed by spraying with deionized water for 10 min, soaking in ultrasonic deionized water for 0.5 h, and oven-baking for 1 h.The cleaned samples were treated by fluoroform plasma with a power of 10 W, gas flow of 50 sccm, and pressure of 0.2 Torr for 10 s in the pretreatment chamber.
The samples were transferred to the organic chamber with a base pressure of 5 × 10 -7 Torr for the deposition of NPB, AIE emitters (TTB and TNB), and TPBi.The samples were then transferred to the metal chamber for the deposition of cathode, which was composed of lithium fluoride (LiF) capped with aluminum (Al).The light-emitting area was 4 mm 2 as defined by the overlap of the anode and cathode.The current density-voltage-luminance characteristics of the devices were measured by a HP4145B semiconductor parameter analyzer and a calibrated UDT PIN-25D silicon photodiode.The luminance and external quantum efficiencies of the devices were inferred from the photocurrent of the photodiode.The EL spectra were determined by a PR650 spectrophotometer.All the measurements were performed at room temperature under air without device encapsulation.Mater., 2014, 24, 635.

Fig. S2
Fig. S2 Time-resolved fluorescence decay curves of (A) TTB and (B) TNB in solid state at room temperature.

Fig
Fig. S4 (A) TGA thermograms and (B) DSC curves of TTB and TNB recorded during the second heating cycle at a rate of 10 °C /min.

Fig. S5 (
Fig. S5 (A) EL spectra of TNB.(B) Current density-voltage-luminance characteristics of multilayer EL devices of TNB.Changes in (C) power and current and (D) external quantum efficiencies with the applied current density in multilayer EL devices of TNB.Device configuration: ITO/(NPB)/TNB/TPBi/LiF/Al.

Fig. S6
Fig. S6 Energy level diagrams and device configurations of (A) device II and (B) device IV.
Fig. S2 Time-resolved fluorescence decay curves of (A) TTB and (B) TNB in the solid state at room temperature.

a
Fig. S5 (A) EL spectra of TNB.(B) Current density-voltage-luminance characteristics of multilayer EL devices of TNB.Changes in (C) power and current and (D) external quantum efficiencies with the applied current density in multilayer EL devices of TNB.Device configuration: ITO/(NPB)/TNB/TPBi/LiF/Al.

Table S3
EL performance of TTB and TNB.

Table S1 .
Absorption and emission of TTB and TNB in different solvents a a Abbreviation: λ ab = absorption maximum, λ em = emission maximum.

Table S2
Optical, electronic and thermal properties of TTB and TNB.
a Absorption maximum (λ ab ) in THF.b Emission maximum (λ em ) in THF solutions (soln, 10 μM), THF/water mixtures (aggr; 1:9 v/v; 10 μM), and solid thin films spin-coated from THF solution.c Φ F , s are the fluorescence quantum efficiencies in the solid state measured by a calibrated integrating sphere.

Table S3
EL performances of TTB and TNB a