Journal article Open Access
Simulation of the Nanoscale Joint Surrounding Gate SOI MOSFET Characteristics
Nikolae V. Masalsky
BibTeX Export
@article{nikolae_v_masalsky_2020_5844292,
author = {Nikolae V. Masalsky},
title = {{Simulation of the Nanoscale Joint Surrounding
Gate SOI MOSFET Characteristics}},
journal = {{International Journal of Innovative Technology and
Exploring Engineering (IJITEE)}},
year = 2020,
volume = 9,
number = 12,
pages = {150-153},
month = oct,
doi = {10.35940/ijitee.K7831.1091220},
url = {https://doi.org/10.35940/ijitee.K7831.1091220}
}
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| Data volume | 3.8 MB |
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Indexed in
- Publication date:
- October 30, 2020
- DOI:
-
- Keyword(s):
- nanoscale SOI MOSFET, surrounding gate, shortchannel effects, logic gate, low supply voltage
- Subject(s):
- Published in:
- International Journal of Innovative Technology and Exploring Engineering (IJITEE): 9 pp. 150-153 (12).
- Related identifiers:
- Cited by
- 2278-3075 (ISSN) (Journal article)
- License (for files):
- Creative Commons Attribution 4.0 International