Planned intervention: On Wednesday April 3rd 05:30 UTC Zenodo will be unavailable for up to 2-10 minutes to perform a storage cluster upgrade.
Published November 24, 2021 | Version v1
Dataset Open

High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx

Creators

  • 1. SINTEF Digital

Description

This page contains selected data from the peer-reviewed paper "High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx" published in Sensors by Ozhan Koybasi.

Description of attached files:

Figure 5. Simulated p-polarization reflectance as a function of wavelength for PQEDs mounted in trap configuration with an angle of 15° between the diodes. In this configuration the light beam undergoes 7 reflections: one at 0° degree and two reflections at 15°, 30°, and 45°. The reflectance is reported for six different thicknesses of the SiNx.

Figure 6. Maximum and mean values evaluated in the wavelength interval 400–850 nm of the p-polarization reflectance as a function of SiNx thickness for PQEDs mounted in trap configuration with an angle of 15° between the diodes.

Figure 7. Maximum and mean values evaluated in the wavelength interval 400–850 nm of the p-polarization reflectance as a function of SiNx thickness, when a buffer layer of 6 nm SiO2 is depos-ited before SiNx, for PQEDs mounted in trap configuration with an angle of 15° between the di-odes.

Figure 8. Effective lifetime τeff vs. excess carrier density (Δn) for samples prepared with passivation processes described in Table 1.

Figure 9. Photoluminescence (PL) lifetime images of samples prepared with the passivation processes described in Table 1.

Figure 10. Capacitance—voltage (C—V) measurement results of MIS capacitors prepared with the passivation processes E2 (6 nm SiO2+ 65 nm SiNx) and E6 (65 nm SiNx) as described in Table 1, at a frequency of 1 kHz.

Figure 11. Injection dependent effective minority carrier lifetime τeff (Δn) of test samples passivated with processes E2 (6 nm SiO2+ 65 nm SiNx) and E6 (65 nm SiNx) as described in Table 1 with simu-lation fits to extract SRV and τbulk.

Figure 12. Simulated IQD as a function of reverse bias voltage for p-type inversion-layer photodi-ode that would be fabricated with passivation E2 (6 nm SiO2+ 65 nm SiNx) and E6 (65 nm SiNx) as described in Table I. The simulations were performed at a wavelength of 488 nm.

Figure 13. Simulated IQD as a function of wavelength for p-type inversion-layer photodiode that would be fabricated with passivation E2 (6 nm SiO2+ 65 nm SiNx) and E6 (65 nm SiNx) as described in Table I. The simulations were performed at a reverse bias voltage of 5 V.

Figure 16. Spatial uniformity of optical power responsivity of the PQEDs with SiO2/SiNx stack photodiodes P18-55-45 (a) and P18-54-44 (b).

 

Files

Figure 9 - E1.txt

Files (61.5 MB)

Name Size Download all
md5:806b42bf390cd1b72bfb05114249aef6
21.3 kB Download
md5:48149404549778b7f13390f6dcff8394
15.0 kB Download
md5:8ea31328337f9b02b7381a14b4730f75
10.8 kB Download
md5:3b2b7fe65404d5aca371a5257f4c88b9
8.6 kB Download
md5:5ff4f1611c0749755e7352825f773371
50.5 kB Download
md5:68663fac0eba4cfcb82caa1998fe2588
3.4 kB Download
md5:55323a0386970518a622503d557a7f51
6.7 kB Download
md5:c20373d80e31a499950bdc10898d5d97
893 Bytes Download
md5:d3e620d1da1194d430571e85b6c9d1d2
259.0 kB Download
md5:cfa120ab8da513b8974e07d5cdad4337
7.4 MB Preview Download
md5:48cc4950f06e1d04f08de4fef4f1449f
7.3 MB Preview Download
md5:2c72e1e30b76ac49a35274f84b252ccd
7.3 MB Preview Download
md5:96120647b669b3ffcc34cc43b9f85209
7.3 MB Preview Download
md5:ef9af81db4528cb4d1986b194087ce9b
8.0 MB Preview Download
md5:efad5566d338eb8ea2b23d267b8ef9de
7.9 MB Preview Download
md5:ea4d80227bad704edf450ba60c40101b
8.0 MB Preview Download
md5:2f8f10796cb928e7c757a1c95acd8b95
7.8 MB Preview Download