High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx
Description
This page contains selected data from the peer-reviewed paper "High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO2/SiNx" published in Sensors by Ozhan Koybasi.
Description of attached files:
Figure 5. Simulated p-polarization reflectance as a function of wavelength for PQEDs mounted in trap configuration with an angle of 15° between the diodes. In this configuration the light beam undergoes 7 reflections: one at 0° degree and two reflections at 15°, 30°, and 45°. The reflectance is reported for six different thicknesses of the SiNx.
Figure 6. Maximum and mean values evaluated in the wavelength interval 400–850 nm of the p-polarization reflectance as a function of SiNx thickness for PQEDs mounted in trap configuration with an angle of 15° between the diodes.
Figure 7. Maximum and mean values evaluated in the wavelength interval 400–850 nm of the p-polarization reflectance as a function of SiNx thickness, when a buffer layer of 6 nm SiO2 is depos-ited before SiNx, for PQEDs mounted in trap configuration with an angle of 15° between the di-odes.
Figure 8. Effective lifetime τeff vs. excess carrier density (Δn) for samples prepared with passivation processes described in Table 1.
Figure 9. Photoluminescence (PL) lifetime images of samples prepared with the passivation processes described in Table 1.
Figure 10. Capacitance—voltage (C—V) measurement results of MIS capacitors prepared with the passivation processes E2 (6 nm SiO2+ 65 nm SiNx) and E6 (65 nm SiNx) as described in Table 1, at a frequency of 1 kHz.
Figure 11. Injection dependent effective minority carrier lifetime τeff (Δn) of test samples passivated with processes E2 (6 nm SiO2+ 65 nm SiNx) and E6 (65 nm SiNx) as described in Table 1 with simu-lation fits to extract SRV and τbulk.
Figure 12. Simulated IQD as a function of reverse bias voltage for p-type inversion-layer photodi-ode that would be fabricated with passivation E2 (6 nm SiO2+ 65 nm SiNx) and E6 (65 nm SiNx) as described in Table I. The simulations were performed at a wavelength of 488 nm.
Figure 13. Simulated IQD as a function of wavelength for p-type inversion-layer photodiode that would be fabricated with passivation E2 (6 nm SiO2+ 65 nm SiNx) and E6 (65 nm SiNx) as described in Table I. The simulations were performed at a reverse bias voltage of 5 V.
Figure 16. Spatial uniformity of optical power responsivity of the PQEDs with SiO2/SiNx stack photodiodes P18-55-45 (a) and P18-54-44 (b).
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Figure 9 - E1.txt
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