Journal article Open Access
Ultrathin epitaxial Bi film growth on 2D HfTe2 template
Xenogiannopoulou, Evangelia;
Tsoutsou, Dimitra;
Tsipas, Polychronis;
Fragkos, Sotirios;
Chaitoglou, Stefanos;
Kelaidis, Nikolaos;
Dimoulas, Athanasios
Among ultrathin monoelemental two-dimensional (2D) materials, bismuthene, the single layer of heavier group-VΑ element bismuth (Bi), has been predicted to have large non trivial gap. Here, we demonstrate the growth of Bi films by molecular beam epitaxy on 2D-HfTe2 template. At the initial stage of Bi deposition (1–2 bilayers, BL), both the pseudocubic Bi(110) and the hexagonal Bi(111) phases are formed. When reaching 3 BL Bi, a transformation to pure hexagonal Bi(111) occurs. The electronic band structure of 3 BL Bi(111) films was measured by angle-resolved photoemission spectroscopy showing very good matching with the density functional theory band structure calculations of 3 BL free standing Bi(111). The grown Bi(111) thin film was capped with a protective Al2O3 layer and its stability under ambient conditions, necessary for practical applications and device fabrication, was confirmed by x-ray photoelectron spectroscopy and Raman spectroscopy.
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- Publication date:
- October 20, 2021
- DOI:
-
- Keyword(s):
- 2D materials, MBE, epitaxy, topological materials, topological insulator, 2D heterostructure, ARPES, STM, DFT, Raman, XPS
- Published in:
- Nanotechnology: 33 pp. 015701 (1).
- Grants:
-
European Commission:
- SKYTOP - Skyrmion-Topological insulator and Weyl semimetal technology (824123)
- Related identifiers:
- Published in
- 10.1088/1361-6528/ac2d08 (Journal article)
- License (for files):
- Creative Commons Attribution 4.0 International