Conference paper Open Access

Study of Nanowire Characteristics of a Junctionless Transistor Depending on the Gate Length

Rusev, Rostislav; Angelov, George; Ruskova, Ivelina; Gieva, Elitsa; Nikolov, Dimitar; Spasova, Mariya; Hristov, Marin; Radonov, Rossen

Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications.

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