5513316
doi
10.35940/ijisme.A1141.096219
oai:zenodo.org:5513316
Blue Eyes Intelligence Engineering & Sciences Publication (BEIESP)
Publisher
Silicon Carbide MESFET High Frequency Oscillator for Microwave Applications
Boggadi Nagarjuna Reddy
, Ph.D scholar, high speed and frequency SiC devices and integrated circuits, at Bharath Institute of Higher Education and Research, Chennai.
issn:2319-6386
info:eu-repo/semantics/openAccess
Creative Commons Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/legalcode
MESFET, Silicon Carbide, Temperature, Frequency, etc.
<p>The Gouriet oscillator is mainly dealing with 4HSiC metal semiconductor field effect transistor is fabricated with HPSI substrate and passive integrated elements are based on design for demand of the required function of frequency 1GHz. This high frequency or temperature oscillator is operated from 30 to 200˚C, the gain of the delivered power of 21.8dbm at the frequency of 1GHz and the temperature of 200˚C. The oscillator transistor output response is at 200˚C, the improved percentage is 15%. This output response of the difference in between the frequency around the vary of temperature is less than 0.5%.</p>
Zenodo
2019-09-15
info:eu-repo/semantics/article
5513315
1631929708.591361
424646
md5:b0813cf9cb397ebd7567dd36a3cfc155
https://zenodo.org/records/5513316/files/A11410076119.pdf
public
2319-6386
Is cited by
issn
International Journal of Innovative Science and Modern Engineering (IJISME)
6
2
1-4
2019-09-15