Journal article Open Access

Intergranular magnetoresistance of strontium ferromolybdate ceramics caused by spin-polarized tunneling

Evgenii Artiukh; Gunnar Suchaneck

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    <subfield code="a">&lt;p&gt;In this work, we develop a model for the description of the low-field magnetoresistance of Sr&lt;sub&gt;2&lt;/sub&gt;FeMoO&lt;sub&gt;6&amp;minus;&amp;delta;&lt;/sub&gt; ceramics that, for the very first time, is considering the magnetic field dependence of the tunneling barrier height. The core of the model is the temperature and magnetic field dependence of the reduced magnetization &lt;em&gt;m&lt;/em&gt;. Spin polarization is considered as a function of temperature and antisite disordering. A magnetic field dependence of the intergrain barrier height was supposed. The model satisfactorily describes the low field magnetoresistance for magnetic fields exceeding several times the coercive field.&lt;/p&gt;</subfield>
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    <subfield code="u">TU Dresden, Solid State Electronics Laboratory, 01062, Dresden, Germany</subfield>
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    <subfield code="a">Gunnar Suchaneck</subfield>
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    <subfield code="u">SSPA "Scientific-Practical Materials Research Centre of NAS of Belarus", Cryogenic Research Division, 220072, Minsk, Belarus</subfield>
    <subfield code="a">Evgenii Artiukh</subfield>
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    <subfield code="a">eng</subfield>
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    <subfield code="a">Strontium ferromolybdate</subfield>
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    <subfield code="a">Magnetoresistance</subfield>
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    <subfield code="a">Spin-polarized tunneling</subfield>
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    <subfield code="a">10.1016/j.oceram.2021.100171</subfield>
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    <subfield code="a">Intergranular magnetoresistance of strontium ferromolybdate ceramics caused by spin-polarized tunneling</subfield>
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    <subfield code="a">Physical principles of the creation of novel SPINtronic materials on the base of MULTIlayered metal-oxide FILMs for magnetic sensors and MRAM</subfield>
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