Preprint Open Access

Large Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si (111)

Arun Kumar; Raimondo Cecchini; Lorenzo Locatelli; Claudia Wiemer; Christian Martella; Lucia Nasi; Laura Lazzarini; Roberto Mantovan; Massimo Longo


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    "title": "Large Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si (111)", 
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    "creators": [
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        "affiliation": "CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy", 
        "name": "Arun Kumar"
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      {
        "affiliation": "CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy", 
        "name": "Raimondo Cecchini"
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        "affiliation": "CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy", 
        "name": "Lorenzo Locatelli"
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        "affiliation": "CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy", 
        "name": "Claudia Wiemer"
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        "affiliation": "CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy", 
        "name": "Christian Martella"
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        "affiliation": "CNR - Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze, 7/A, 43124 Parma, Italy", 
        "name": "Lucia Nasi"
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        "affiliation": "CNR - Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze, 7/A, 43124 Parma, Italy", 
        "name": "Laura Lazzarini"
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        "affiliation": "CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy", 
        "name": "Roberto Mantovan"
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    "description": "<p>Bi<sub>2</sub>Te<sub>3 </sub>is attracting a renewed interest, due to its topological insulator properties; however, even using advanced physical and chemical deposition techniques, the growth of high-crystal quality layers on substrates allowing its technological employment, such as Si, is very challenging, due to the structural complexity of Bi<sub>2</sub>Te<sub>3</sub>. In this work, we present the optimized large area growth of topological insulator Bi<sub>2</sub>Te<sub>3</sub> epitaxial layers on un-buffered i-Si (111) substrates via Metal-Organic Vapor Phase Epitaxy (MOVPE), which is of crucial importance for future integration into CMOS compatible spintronic devices. We found that the key to maximizing the layer quality requires a balanced control of the reactor pressure (P), growth temperature (T), and growth time (t). Within a proper parameter window, the grown Bi<sub>2</sub>Te<sub>3</sub> thin layers are crystalline, stoichiometric, and highly uniform, also at the local scale. They exhibit a rhombohedral crystalline structure, and they are [001] out-of-plane oriented on the i-Si (111) substrate. Low temperature magnetoresistance measurements revealed clear Weak Antilocalization (WAL) effects, demonstrating that the optimized MOVPE - grown Bi<sub>2</sub>Te<sub>3</sub> is a topological insulator, hence opening further possibilities for its technology-transfer to innovative devices.</p>"
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