Preprint Open Access

Large Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si (111)

Arun Kumar; Raimondo Cecchini; Lorenzo Locatelli; Claudia Wiemer; Christian Martella; Lucia Nasi; Laura Lazzarini; Roberto Mantovan; Massimo Longo


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  <identifier identifierType="URL">https://zenodo.org/record/4896787</identifier>
  <creators>
    <creator>
      <creatorName>Arun Kumar</creatorName>
      <affiliation>CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy</affiliation>
    </creator>
    <creator>
      <creatorName>Raimondo Cecchini</creatorName>
      <affiliation>CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy</affiliation>
    </creator>
    <creator>
      <creatorName>Lorenzo Locatelli</creatorName>
      <affiliation>CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy</affiliation>
    </creator>
    <creator>
      <creatorName>Claudia Wiemer</creatorName>
      <affiliation>CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy</affiliation>
    </creator>
    <creator>
      <creatorName>Christian Martella</creatorName>
      <affiliation>CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy</affiliation>
    </creator>
    <creator>
      <creatorName>Lucia Nasi</creatorName>
      <affiliation>CNR - Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze, 7/A, 43124 Parma, Italy</affiliation>
    </creator>
    <creator>
      <creatorName>Laura Lazzarini</creatorName>
      <affiliation>CNR - Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze, 7/A, 43124 Parma, Italy</affiliation>
    </creator>
    <creator>
      <creatorName>Roberto Mantovan</creatorName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-9353-4137</nameIdentifier>
      <affiliation>CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy</affiliation>
    </creator>
    <creator>
      <creatorName>Massimo Longo</creatorName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-6364-8184</nameIdentifier>
      <affiliation>CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Large Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si (111)</title>
  </titles>
  <publisher>Zenodo</publisher>
  <publicationYear>2021</publicationYear>
  <subjects>
    <subject>Bi2Te3</subject>
    <subject>MOCVD,</subject>
    <subject>MOVPE</subject>
    <subject>epitaxial layers</subject>
    <subject>topological insulators</subject>
  </subjects>
  <dates>
    <date dateType="Issued">2021-06-03</date>
  </dates>
  <resourceType resourceTypeGeneral="Preprint"/>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://zenodo.org/record/4896787</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="Compiles" resourceTypeGeneral="JournalArticle">10.1021/acs.cgd.1c00328</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1021/acs.cgd.1c00328</relatedIdentifier>
  </relatedIdentifiers>
  <version>preprint</version>
  <rightsList>
    <rights rightsURI="https://creativecommons.org/licenses/by/4.0/legalcode">Creative Commons Attribution 4.0 International</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3 &lt;/sub&gt;is attracting a renewed interest, due to its topological insulator properties; however, even using advanced physical and chemical deposition techniques, the growth of high-crystal quality layers on substrates allowing its technological employment, such as Si, is very challenging, due to the structural complexity of Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt;. In this work, we present the optimized large area growth of topological insulator Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; epitaxial layers on un-buffered i-Si (111) substrates via Metal-Organic Vapor Phase Epitaxy (MOVPE), which is of crucial importance for future integration into CMOS compatible spintronic devices. We found that the key to maximizing the layer quality requires a balanced control of the reactor pressure (P), growth temperature (T), and growth time (t). Within a proper parameter window, the grown Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; thin layers are crystalline, stoichiometric, and highly uniform, also at the local scale. They exhibit a rhombohedral crystalline structure, and they are [001] out-of-plane oriented on the i-Si (111) substrate. Low temperature magnetoresistance measurements revealed clear Weak Antilocalization (WAL) effects, demonstrating that the optimized MOVPE - grown Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; is a topological insulator, hence opening further possibilities for its technology-transfer to innovative devices.&lt;/p&gt;</description>
  </descriptions>
  <fundingReferences>
    <fundingReference>
      <funderName>European Commission</funderName>
      <funderIdentifier funderIdentifierType="Crossref Funder ID">10.13039/501100000780</funderIdentifier>
      <awardNumber awardURI="info:eu-repo/grantAgreement/EC/H2020/824123/">824123</awardNumber>
      <awardTitle>Skyrmion-Topological insulator and Weyl semimetal technology</awardTitle>
    </fundingReference>
  </fundingReferences>
</resource>
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