Preprint Open Access

Large Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si (111)

Arun Kumar; Raimondo Cecchini; Lorenzo Locatelli; Claudia Wiemer; Christian Martella; Lucia Nasi; Laura Lazzarini; Roberto Mantovan; Massimo Longo


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        <foaf:name>Roberto Mantovan</foaf:name>
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        <foaf:name>Massimo Longo</foaf:name>
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            <foaf:name>CNR - Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864, Agrate Brianza, Italy</foaf:name>
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    <dct:title>Large Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si (111)</dct:title>
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    <dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#gYear">2021</dct:issued>
    <dcat:keyword>Bi2Te3</dcat:keyword>
    <dcat:keyword>MOCVD,</dcat:keyword>
    <dcat:keyword>MOVPE</dcat:keyword>
    <dcat:keyword>epitaxial layers</dcat:keyword>
    <dcat:keyword>topological insulators</dcat:keyword>
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        <foaf:name>European Commission</foaf:name>
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    <dct:description>&lt;p&gt;Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3 &lt;/sub&gt;is attracting a renewed interest, due to its topological insulator properties; however, even using advanced physical and chemical deposition techniques, the growth of high-crystal quality layers on substrates allowing its technological employment, such as Si, is very challenging, due to the structural complexity of Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt;. In this work, we present the optimized large area growth of topological insulator Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; epitaxial layers on un-buffered i-Si (111) substrates via Metal-Organic Vapor Phase Epitaxy (MOVPE), which is of crucial importance for future integration into CMOS compatible spintronic devices. We found that the key to maximizing the layer quality requires a balanced control of the reactor pressure (P), growth temperature (T), and growth time (t). Within a proper parameter window, the grown Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; thin layers are crystalline, stoichiometric, and highly uniform, also at the local scale. They exhibit a rhombohedral crystalline structure, and they are [001] out-of-plane oriented on the i-Si (111) substrate. Low temperature magnetoresistance measurements revealed clear Weak Antilocalization (WAL) effects, demonstrating that the optimized MOVPE - grown Bi&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; is a topological insulator, hence opening further possibilities for its technology-transfer to innovative devices.&lt;/p&gt;</dct:description>
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