Malmqvist, Robert
Jonsson, Rolf
Bernland, Anders
Bao, Mingquan
LeBlanc, Rémy
Buisman, Koen
Fager, Christian
Andersson, Kristoffer
2021-01-14
<p>This paper presents an experimental evaluation of two co-planar waveguide (CPW) based E/W-band amplifier MMICs realised in a 60 nm GaN-on-Si foundry process. A onestage amplifier and a two-stage amplifier realised in this process have a measured maximum gain of 8 dB and 16 dB at 73-74 GHz, respectively. The two amplifiers have a measured gain of 3 dB and 7 dB at 93 GHz when the drain voltage (Vd) is 10 V and the drain current (Id) is 15 mA per stage. The two-stage amplifier has a measured noise figure (NF) of 2.7-3.8 dB and 2.9-4.1 dB at 90-95 GHz when the Id is 10 mA and Vd is 5 V and 10 V, respectively. The measured NF of this amplifier is equal to 4-6 dB at 92-95 GHz when an Id of 10-20 mA is used in each stage with same drain bias. </p>
https://doi.org/10.5281/zenodo.4497009
oai:zenodo.org:4497009
eng
Zenodo
https://zenodo.org/communities/serena-h2020
https://zenodo.org/communities/eu
https://doi.org/10.5281/zenodo.4497008
info:eu-repo/semantics/openAccess
Creative Commons Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/legalcode
EuMC, European Microwave Integrated Circuits Conference 2020, Jaarbeurs Utrecht, The Netherlands, 12-14 January 2021
60 nm GaN-on-Si MMIC process
W-band amplifiers
noise characterization
power handling
E/W-Band CPW-based Amplifier MMICs Fabricated in a 60 nm GaN-on-Silicon Foundry Process
info:eu-repo/semantics/conferencePaper