Published July 2, 2020
| Version v1
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Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications
Creators
- 1. Ghent University imec
- 2. Tyndall National Institute, University College Cork
- 3. Ghen University imec
Description
We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.
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oe-28-14-21275.pdf
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