Journal article Open Access

Room-temperature stabilization of antiferromagnetic skyrmions in synthetic antiferromagnets

Legrand William; Cros Vincent


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        <foaf:name>Legrand William</foaf:name>
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            <foaf:name>Unité Mixte de Physique, CNRS/Thales, Université Paris-Saclay</foaf:name>
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        <foaf:name>Cros Vincent</foaf:name>
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    <dct:title>Room-temperature stabilization of antiferromagnetic skyrmions in synthetic antiferromagnets</dct:title>
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    <dcat:keyword>skyrmions; topological textures; spintronics</dcat:keyword>
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        <foaf:name>European Commission</foaf:name>
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    <dct:description>&lt;p&gt;Room-temperature skyrmions in ferromagnetic films and multilayers show promise for encoding information bits in new computing technologies. Despite recent progress, ferromagnetic order generates dipolar&lt;br&gt; fields that prevent ultrasmall skyrmion sizes, and allows a transverse deflection of moving skyrmions that&lt;br&gt; hinders their efficient manipulation. Antiferromagnetic skyrmions shall lift these limitations. Here we&lt;br&gt; demonstrate that room-temperature antiferromagnetic skyrmions can be stabilized in synthetic antiferromagnets (SAFs), in which perpendicular magnetic anisotropy (PMA), antiferromagnetic coupling and chiral&lt;br&gt; order can be adjusted concurrently. Utilizing interlayer electronic coupling to an adjacent bias layer (BL),&lt;br&gt; we demonstrate that spin-spiral states obtained in a SAF with vanishing PMA can be turned into isolated antiferromagnetic skyrmions. We also provide model-based estimates of skyrmion size and stability,&lt;br&gt; showing that room-temperature antiferromagnetic skyrmions below 10 nm in radius can be anticipated in&lt;br&gt; further optimized SAFs. Antiferromagnetic skyrmions in SAFs may thus solve major issues associated with&lt;br&gt; ferromagnetic skyrmions for low-power spintronic devices.&lt;br&gt; &amp;nbsp;&lt;/p&gt;</dct:description>
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    <dct:title>Skyrmion-Topological insulator and Weyl semimetal technology</dct:title>
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