Journal article Open Access

Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator

Emanuele Longo; Claudia Wiemer; Matteo Belli; Raimondo Cecchini; Massimo Longo; Matteo Cantoni; Christian Rinaldi; Michael D. Overbeek; Charles H. Winter; Gianluca Gubbiotti; Graziella Tallarida; Marco Fanciulli; Roberto Mantovan


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    <subfield code="u">Dipartimento di Fisica, Politecnico di Milano</subfield>
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    <subfield code="u">Dipartimento di Fisica, Politecnico di Milano</subfield>
    <subfield code="a">Christian Rinaldi</subfield>
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    <subfield code="u">CNR-IOM, Sede Secondaria di Perugia, c/o Dipartimento di Fisica e Geologia</subfield>
    <subfield code="a">Gianluca Gubbiotti</subfield>
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    <subfield code="u">Università degli studi di Milano-Bicocca, Dipartimento di Scienze dei Materiali</subfield>
    <subfield code="a">Marco Fanciulli</subfield>
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    <subfield code="a">Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator</subfield>
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    <subfield code="a">Skyrmion-Topological insulator and Weyl semimetal technology</subfield>
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    <subfield code="a">&lt;p&gt;Interfacing ferromagnetic materials with topological insulators is an intriguing strategy in order to enhance spin-to-charge conversion mechanisms, paving the way toward highly efficient spin-based electronic devices. In particular, the use of large-scale deposition techniques is demanding for a sustainable and cost-effective industrial technology transfer. In this work, we study the magnetic properties of the Co/Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; heterostructure, where the ferromagnetic Co layer is deposited by atomic layer deposition on top of the Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; topological insulator, which is grown by metal organic chemical vapor deposition. In particular, broadband ferromagnetic resonance is employed to characterize the Co/Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; system and the reference heterostructure Co/Pt. For Co/Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt;, we extract an effective magnetic anisotropy constant Keff=4.26∙10&lt;sup&gt;6&amp;nbsp;&lt;/sup&gt;erg/cm&lt;sup&gt;3&lt;/sup&gt; , which is an order of magnitude higher than in Co/Pt (Keff=0.43∙10&lt;sup&gt;6&amp;nbsp;&lt;/sup&gt;erg/cm&lt;sup&gt;3&lt;/sup&gt;). The large difference in the Keff values observed in Co/Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; and Co/Pt is explained in terms of the different Co crystalline structures achieved on top of Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; and Pt, respectively. Interestingly, the Co/Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; system displays a relatively large Gilbert damping constant (&amp;alpha; = 0.095), which we suggest as possibly due to spin pumping from the Co layer into the Sb&lt;sub&gt;2&lt;/sub&gt;Te&lt;sub&gt;3&lt;/sub&gt; topological insulator.&lt;/p&gt;</subfield>
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