Journal article Open Access

Insights into image contrast from dislocations in ADF-STEM

Oveisi, E; Spadaro, M.C.; Rotunno, Enzo; Grillo, Vincenzo; Hébert, C

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<oai_dc:dc xmlns:dc="" xmlns:oai_dc="" xmlns:xsi="" xsi:schemaLocation="">
  <dc:creator>Oveisi, E</dc:creator>
  <dc:creator>Spadaro, M.C.</dc:creator>
  <dc:creator>Rotunno, Enzo</dc:creator>
  <dc:creator>Grillo, Vincenzo</dc:creator>
  <dc:creator>Hébert, C</dc:creator>
  <dc:description>Competitive mechanisms contribute to image contrast from dislocations in annular dark-field scanning transmission electron microscopy (ADF-STEM). A clear theoretical understanding of the mechanisms underlying the ADF-STEM contrast is therefore essential for correct interpretation of dislocation images. This paper reports on a systematic study of the ADF-STEM contrast from dislocations in a GaN specimen, both experimentally and computationally. Systematic experimental ADF-STEM images of the edge-character dislocations reveal a number of characteristic contrast features that are shown to depend on both the angular detection range and specific position of the dislocation in the sample. A theoretical model based on electron channelling and Bloch-wave scattering theories, supported by numerical simulations based on Grillo's strain-channelling equation, is proposed to elucidate the physical origin of such complex contrast phenomena.</dc:description>
  <dc:description>The research supporting the results shown in this paper have received additional fundings from the Swiss National
Science Foundation (project no.200020-143217).</dc:description>
  <dc:title>Insights into image contrast from dislocations in ADF-STEM</dc:title>
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