Journal article Open Access
Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium
Zacharaki Christina; Tsipas Polychronis; Chaitoglou Stefanos; Evangelou Evangelos; Istrate Cosmin; Pintilie Lucian; Dimoulas Athanasios
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{
"type": "FeatureCollection",
"features": []
}
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Indexed in
- Publication date:
- May 7, 2020
- DOI:
-
- Keyword(s):
- ferroelectric HZO, germanium, depolarization field, Ge-MFS capacitors
- Grants:
-
European Commission:
- 3eFERRO - Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2 (780302)
- License (for files):
- Creative Commons Attribution 4.0 International