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Optimising GaN heterostructures for 5G

Behet, Markus; Derluyn, Joff; Degroote, Stefan; Germain, Marianne


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    "description": "<p>THE ROLL-OUT of 5G is great news for GaN. It is predicted to propel the market for RF devices made from this wide bandgap semiconductor to more than $2 billion by 2024, according to the French market analyst Yole D&eacute;veloppement. The move from 4G to 5G should be seen as part evolution, part revolution. Grabbing the most attention is the availability of enhanced mobile services, resulting from faster speeds, ultra-low latency, and a reduction in power consumption. However, 5G will also bring further investment in traditional machineto-machine and internet-of-things applications, and open up new market opportunities in mission critical services, such as autonomous vehicles, drones and &lsquo;telehealth&rsquo;. It is even expected that 5G will act as a catalyst for transformative changes of work processes, and will establish a new set of rules for competitive economic advantages. So great are these changes that IHS Markit forecasts 5G to enable $13.2 trillion of global economic output in 2035.</p>", 
    "language": "eng", 
    "title": "Optimising GaN heterostructures for 5G", 
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