February 6, 2020 Journal article Open Access

Behet, Markus; Derluyn, Joff; Degroote, Stefan; Germain, Marianne

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      <creatorName>Behet, Markus</creatorName>
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      <creatorName>Degroote, Stefan</creatorName>
      <givenName>Stefan</givenName>
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      <creatorName>Germain, Marianne</creatorName>
      <givenName>Marianne</givenName>
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      <affiliation>Epigan</affiliation>
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  <titles>
    <title>Optimising GaN heterostructures for 5G</title>
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  <publisher>Zenodo</publisher>
  <publicationYear>2020</publicationYear>
  <dates>
    <date dateType="Issued">2020-02-06</date>
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  <language>en</language>
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    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
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    <description descriptionType="Abstract">&lt;p&gt;THE ROLL-OUT of 5G is great news for GaN. It is predicted to propel the market for RF devices made from this wide bandgap semiconductor to more than $2 billion by 2024, according to the French market analyst Yole D&amp;eacute;veloppement. The move from 4G to 5G should be seen as part evolution, part revolution. Grabbing the most attention is the availability of enhanced mobile services, resulting from faster speeds, ultra-low latency, and a reduction in power consumption. However, 5G will also bring further investment in traditional machineto-machine and internet-of-things applications, and open up new market opportunities in mission critical services, such as autonomous vehicles, drones and &amp;lsquo;telehealth&amp;rsquo;. It is even expected that 5G will act as a catalyst for transformative changes of work processes, and will establish a new set of rules for competitive economic advantages. So great are these changes that IHS Markit forecasts 5G to enable $13.2 trillion of global economic output in 2035.&lt;/p&gt;</description>
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      <funderName>European Commission</funderName>
      <funderIdentifier funderIdentifierType="Crossref Funder ID">10.13039/100010661</funderIdentifier>
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      <awardTitle>gan-on-Silicon Efficient mm-wave euRopean systEm iNtegration plAtform</awardTitle>
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