10.5281/zenodo.3706893
https://zenodo.org/records/3706893
oai:zenodo.org:3706893
Behet, Markus
Markus
Behet
Epigan
Derluyn, Joff
Joff
Derluyn
Epigan
Degroote, Stefan
Stefan
Degroote
Epigan
Germain, Marianne
Marianne
Germain
Epigan
Optimising GaN heterostructures for 5G
Zenodo
2020
2020-02-06
eng
10.5281/zenodo.3706892
https://zenodo.org/communities/serena-h2020
https://zenodo.org/communities/eu
Creative Commons Attribution 4.0 International
THE ROLL-OUT of 5G is great news for GaN. It is predicted to propel the market for RF devices made from this wide bandgap semiconductor to more than $2 billion by 2024, according to the French market analyst Yole Développement. The move from 4G to 5G should be seen as part evolution, part revolution. Grabbing the most attention is the availability of enhanced mobile services, resulting from faster speeds, ultra-low latency, and a reduction in power consumption. However, 5G will also bring further investment in traditional machineto-machine and internet-of-things applications, and open up new market opportunities in mission critical services, such as autonomous vehicles, drones and ‘telehealth’. It is even expected that 5G will act as a catalyst for transformative changes of work processes, and will establish a new set of rules for competitive economic advantages. So great are these changes that IHS Markit forecasts 5G to enable $13.2 trillion of global economic output in 2035.
European Commission
10.13039/501100000780
779305
gan-on-Silicon Efficient mm-wave euRopean systEm iNtegration plAtform