February 6, 2020 Journal article Open Access

Behet, Markus; Derluyn, Joff; Degroote, Stefan; Germain, Marianne

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{
  "publisher": "Zenodo", 
  "DOI": "10.5281/zenodo.3706893", 
  "container_title": "Compound Semiconductor Magazine", 
  "language": "eng", 
  "title": "Optimising GaN heterostructures for 5G", 
  "issued": {
    "date-parts": [
      [
        2020, 
        2, 
        6
      ]
    ]
  }, 
  "abstract": "<p>THE ROLL-OUT of 5G is great news for GaN. It is predicted to propel the market for RF devices made from this wide bandgap semiconductor to more than $2 billion by 2024, according to the French market analyst Yole D&eacute;veloppement. The move from 4G to 5G should be seen as part evolution, part revolution. Grabbing the most attention is the availability of enhanced mobile services, resulting from faster speeds, ultra-low latency, and a reduction in power consumption. However, 5G will also bring further investment in traditional machineto-machine and internet-of-things applications, and open up new market opportunities in mission critical services, such as autonomous vehicles, drones and &lsquo;telehealth&rsquo;. It is even expected that 5G will act as a catalyst for transformative changes of work processes, and will establish a new set of rules for competitive economic advantages. So great are these changes that IHS Markit forecasts 5G to enable $13.2 trillion of global economic output in 2035.</p>", 
  "author": [
    {
      "family": "Behet, Markus"
    }, 
    {
      "family": "Derluyn, Joff"
    }, 
    {
      "family": "Degroote, Stefan"
    }, 
    {
      "family": "Germain, Marianne"
    }
  ], 
  "volume": "26", 
  "type": "article-journal", 
  "issue": "1 January/February", 
  "id": "3706893"
}