Journal article Open Access

Optimising GaN heterostructures for 5G

Behet, Markus; Derluyn, Joff; Degroote, Stefan; Germain, Marianne

THE ROLL-OUT of 5G is great news for GaN. It is predicted to propel the market for RF devices made from this wide bandgap semiconductor to more than $2 billion by 2024, according to the French market analyst Yole Développement. The move from 4G to 5G should be seen as part evolution, part revolution. Grabbing the most attention is the availability of enhanced mobile services, resulting from faster speeds, ultra-low latency, and a reduction in power consumption. However, 5G will also bring further investment in traditional machineto-machine and internet-of-things applications, and open up new market opportunities in mission critical services, such as autonomous vehicles, drones and ‘telehealth’. It is even expected that 5G will act as a catalyst for transformative changes of work processes, and will establish a new set of rules for competitive economic advantages. So great are these changes that IHS Markit forecasts 5G to enable $13.2 trillion of global economic output in 2035.

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