3676445
doi
10.1088/1361-6528/ab6678
oai:zenodo.org:3676445
McNulty, David
University College Cork, Ireland
Biswas, Subhajit
University College Cork, Ireland
Moore, Kalani
University of Limerick, Ireland
Conroy, Michele
University of Limerick, Ireland
Bangert, Ursel
University of Limerick, Ireland
O'Dwyer, Colm
University College Cork, Ireland
Holmes, Justin D.
University College Cork, Ireland
Germanium tin alloy nanowires as anode materials for high performance Li-ion batteries
Doherty, Jessica
University College Cork, Ireland
info:eu-repo/semantics/openAccess
Creative Commons Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/legalcode
Nanowire, Germanium-tin, Li-Ion Battery
<p><strong>Abstract</strong><br>
The combination of two active Li-ion materials (Ge and Sn) can result in improved conduction paths and higher capacity retention. Here we report for the first time, the implementation of Ge<sub>1–x</sub>Sn<sub>x</sub> alloy nanowires as anode materials for Li-ion batteries. Ge<sub>1−x</sub>Sn<sub>x</sub> alloy nanowires have been successfully grown via vapor–liquid–solid technique directly on stainless steel current collectors. Ge<sub>1−x</sub>Sn<sub>x</sub> (x = 0.048) nanowires were predominantly seeded from the Au<sub>0.80</sub>Ag<sub>0.20</sub> catalysts with negligible amount of growth was also directly catalyzed from stainless steel substrate. The electrochemical performance of the the Ge<sub>1−x</sub>Sn<sub>x</sub> nanowires as an anode material for Li-ion batteries was investigated via galvanostatic cycling and detailed analysis of differential capacity plots (DCPs). The nanowire electrodes demonstrated an exceptional capacity retention of 93.4% from the 2nd to the 100th charge at a C/5 rate, while maintaining a specific capacity value of ∼921 mAh g−1 after 100 cycles. Voltage profiles and DCPs revealed that the Ge<sub>1−x</sub>Sn<sub>x</sub> nanowires behave as an alloying mode anode material, as reduction/oxidation peaks for both Ge and Sn were observed, however it is clear that the reversible lithiation of Ge is responsible for the majority of the charge stored.</p>
Data from Nanotechnology, 2020, 31, 165402.
Zenodo
2020-01-28
info:eu-repo/semantics/other
3676444
award_title=Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices; award_number=14/IA/2513; funder_id=0271asj38; funder_name=Science Foundation Ireland;
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https://zenodo.org/records/3676445/files/Figure 2b_HAADF STEM 20180619 Nano 1755 17.png
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https://zenodo.org/records/3676445/files/Figure 1c_EDS-HAADF Nano 2109-Sn.png
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https://zenodo.org/records/3676445/files/Figure 1c_EDS-HAADF Nano 2109-GeSn.png
public
Nanotechnology
31
16
165402
2020-01-28