3674060
doi
10.5281/zenodo.3674060
oai:zenodo.org:3674060
user-eu
A. A. Timopheev
Université Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
N. F. F. Caçoilo
Physics Department and i3N, University of Aveiro, 3810-193 Aveiro, Portugal
S. Auffret
Université Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
R. C. Sousa
Université Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
B. Dieny
Université Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC, SPINTEC, F-38000 Grenoble, France
E. Alves
IPFN, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela LRS, Portugal
N. A. Sobolev
Physics Department and i3N, University of Aveiro, 3810-193 Aveiro, Portugal & National University of Science and Technology "MISiS," 119049 Moscow, Russia
Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctions
B. M. S. Teixeira
Physics Department and i3N, University of Aveiro, 3810-193 Aveiro, Portugal
doi:10.1063/1.5026854
info:eu-repo/semantics/openAccess
Creative Commons Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/legalcode
<p>We have used the ferromagnetic resonance in the X-band (9.37 GHz) to investigate the effect of 400 keV Ar<sup>+</sup> irradiation on the perpendicular magnetic anisotropy (PMA) and Gilbert damping parameter, α, of double-MgO free layers designed for application in perpendicular magnetic tunnel junctions. The samples comprised a MgO/Fe<sub>72</sub>Co<sub>8</sub>B<sub>20</sub>/X(0.2 nm)/Fe<sub>72</sub>Co<sub>8</sub>B<sub>20</sub>/MgO layer stack, where X stands for an ultrathin Ta or W spacer. Samples with two different total FeCoB layer thicknesses, t<sub>FCB</sub> =&thinsp;3.0 nm and t<sub>FCB</sub> =&thinsp;2.6 nm, were irradiated with ion fluences ranging from 10<sup>12</sup> cm<sup>−2</sup> to 10<sup>16</sup> cm<sup>−2</sup>. The effective first-order PMA field, B<sub>K1</sub>, decreased nearly linearly with the logarithm of the fluence for both FeCoB thicknesses and spacer elements. The decrease in B<sub>K1</sub>, which is likely caused by an ion-induced intermixing at the FeCoB/MgO interfaces, resulted in a reorientation of the magnetization of the free layers with t<sub>FCB</sub> =&thinsp;2.6 nm, initially exhibiting a perpendicular easy-axis anisotropy. For intermediate fluences, 10<sup>13</sup> cm<sup>−2</sup> and 10<sup>14</sup> cm<sup>−2</sup>, easy-cone states with different cone angles could be induced in the free layer with a W spacer. Importantly, no corresponding increase in the Gilbert damping was observed. This study shows that ion irradiation can be used to tune the easy-cone anisotropy in perpendicular magnetic tunnel junctions, which is interesting for spintronic applications such as spin-torque magnetic memory devices, oscillators, and sensors.</p>
Zenodo
2018-05-15
info:eu-repo/semantics/article
3674059
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Author Accepted Manuscript
award_title=Physical principles of the creation of novel SPINtronic materials on the
base of MULTIlayered metal-oxide FILMs for magnetic sensors and MRAM; award_number=778308; award_identifiers_scheme=url; award_identifiers_identifier=https://cordis.europa.eu/projects/778308; funder_id=00k4n6c32; funder_name=European Commission;
1582140055.312529
2240519
md5:42db6516c59f2f4a6977cd83f04b1c94
https://zenodo.org/records/3674060/files/Teixeira et al (AAM) - Appl. Phys. Lett. 112, 202403 (2018).pdf
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10.1063/1.5026854
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10.5281/zenodo.3674059
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