Poster Open Access
Characterization of wafer-scale CVD graphene grown on sapphire and SiC: a direct comparison
Sitek, Jakub; McAlesee, Clifford; Conran, Ben; Pasternak, Iwona; Czerniak-Losiewicz, Karolina; Zdrojek, Mariusz; Teo, Ken; Strupinski, Wlodek
Graphene grown on dielectric substrates is posed to have awide range of application, including electronics industry oras a growth template for 2D heterostructures. Among insulating substrates for graphene growth, sapphire and SiC are the most promising [1,2]. SiC is widely recognized as a substrate for the growth of high quality graphene suitable for electronics due to its excellent mobility [3]. However, the potential of sapphire, which is more affordable than SiC, is yet to be fully unveiled [4]. In this study, we compare (by means of AFM, Raman and Hall measurements) graphen e on sapphire and SiC grown at the same process conditions. We show significant differences between substrates and suggest potential areas of applications.
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Poster_Graphene_Week_2019_Helsinki.pdf
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- Publication date:
- October 7, 2019
- DOI:
-
- Keyword(s):
- graphene sapphire SiC
- Grants:
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European Commission:
- Car2TERA - Terahertz sensors and networks for next generation smart automotive electronic systems (824962)
- Meeting:
- Graphene Week 2019, Helsinki, Finland, 23-27 September 2019
- Communities:
- License (for files):
- Creative Commons Attribution 4.0 International