Poster Open Access
Sitek, Jakub; McAlesee, Clifford; Conran, Ben; Pasternak, Iwona; Czerniak-Losiewicz, Karolina; Zdrojek, Mariusz; Teo, Ken; Strupinski, Wlodek
Graphene grown on dielectric substrates is posed to have awide range of application, including electronics industry oras a growth template for 2D heterostructures. Among insulating substrates for graphene growth, sapphire and SiC are the most promising [1,2]. SiC is widely recognized as a substrate for the growth of high quality graphene suitable for electronics due to its excellent mobility . However, the potential of sapphire, which is more affordable than SiC, is yet to be fully unveiled . In this study, we compare (by means of AFM, Raman and Hall measurements) graphen e on sapphire and SiC grown at the same process conditions. We show significant differences between substrates and suggest potential areas of applications.