10.5281/zenodo.3408295
https://zenodo.org/records/3408295
oai:zenodo.org:3408295
Luca Persichetti
Luca Persichetti
0000-0001-6578-254X
Dipartimento di Scienze, Università Roma Tre, Viale G. Marconi, 446- 00146 Rome, Italy
Monica De Seta
Monica De Seta
Dipartimento di Scienze, Università Roma Tre, Viale G. Marconi, 446- 00146 Rome, Italy
Andrea M. Scaparro
Andrea M. Scaparro
Dipartimento di Scienze, Università Roma Tre, Viale G. Marconi, 446- 00146 Rome, Italy
Vaidas Miseikis
Vaidas Miseikis
Center for Nanotechnology Innovation @NEST, IIT, Piazza San Silvestro 12, 56127 Pisa, Italy
Andrea Notargiacomo
Andrea Notargiacomo
Institute for Photonics and Nanotechnology, Via Cineto Romano 42, 00156, CNR-Rome, Italy
Alessandro Ruocco
Alessandro Ruocco
Dipartimento di Scienze, Università Roma Tre, Viale G. Marconi, 446- 00146 Rome, Italy
Anna Sgarlata
Anna Sgarlata
Dipartimento di Fisica, Università di Roma "Tor Vergata", Via Della Ricerca Scientifica, 1- 00133 Rome, Italy
Massimo Fanfoni
Massimo Fanfoni
Dipartimento di Fisica, Università di Roma "Tor Vergata", Via Della Ricerca Scientifica, 1- 00133 Rome, Italy
Filippo Fabbri
Filippo Fabbri
NEST, Istituto Nanoscienze – CNR, Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy.
Camilla Coletti
Camilla Coletti
Center for Nanotechnology Innovation @NEST, IIT, Piazza San Silvestro 12, 56127 Pisa, Italy
Luciana Di Gaspare
Luciana Di Gaspare
Dipartimento di Scienze, Università Roma Tre, Viale G. Marconi, 446- 00146 Rome, Italy
Driving with temperature the synthesis of graphene films on Ge(110)
Zenodo
2019
graphene
Germanium
chemical vapor deposition
scanning tunneling microscopy
2019-06-04
10.5281/zenodo.3238602
Creative Commons Attribution 4.0 International
We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spectroscopic and morphological information, we find that the quality of graphene films depends critically on the growth temperature improving significantly by increasing this temperature in the 910-930 °C range. We correlate the abrupt improvement of the graphene quality to the formation of a quasi-liquid Ge surface occurring in the same temperature range, which determines increased atom diffusivity and sublimation rate. Being observed for diverse Ge orientations, this process is of general relevance for graphene synthesis on Ge.