3266406
doi
10.21276/ijre.2019.6.3.2
oai:zenodo.org:3266406
Resistive Random Access Memory (ReRAM)
Muthu Dayalan
1Senior Software Developer, ANNA University, Chennai, India
info:eu-repo/semantics/openAccess
Creative Commons Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/legalcode
resistive random access memory
resistive switching
performance parameters
resistance switching
electrochemical devices
<p>Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM. The performance parameters of these non-volatile memories such as their operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage will be analyzed. Integration and reliability of Re-RAM in the practical level is compared with other types of memories. Challenges faced by users of ReRAM are addressed in regards to technological fallbacks among other challenges. Finally, the future research on the ReRAM will be analyzed.</p>
Zenodo
2019-07-02
info:eu-repo/semantics/article
3266405
1579538713.600414
268534
md5:6ce017e4ce003daabff6940b4284815f
https://zenodo.org/records/3266406/files/Resistive Random Access Memory (ReRAM.pdf
public