Journal article Open Access

Resistive Random Access Memory (ReRAM)

Muthu Dayalan


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        <foaf:name>Muthu Dayalan</foaf:name>
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            <foaf:name>1Senior Software Developer, ANNA University, Chennai, India</foaf:name>
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    <dct:title>Resistive Random Access Memory (ReRAM)</dct:title>
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    <dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#gYear">2019</dct:issued>
    <dcat:keyword>resistive random access memory</dcat:keyword>
    <dcat:keyword>resistive switching</dcat:keyword>
    <dcat:keyword>performance parameters</dcat:keyword>
    <dcat:keyword>resistance switching</dcat:keyword>
    <dcat:keyword>electrochemical devices</dcat:keyword>
    <dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#date">2019-07-02</dct:issued>
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    <dct:description>&lt;p&gt;Resistive Random-Access Memory (ReRAM) technology has been viewed as one of the most reliable non-volatile memories that have are emerging in markets. In this research paper, the revolution of ReRAM will be analyzed. Also, the paper will also review the recent progress in the technological development of ReRAM. The performance parameters of these non-volatile memories such as their operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage will be analyzed. Integration and reliability of Re-RAM in the practical level is compared with other types of memories. Challenges faced by users of ReRAM are addressed in regards to technological fallbacks among other challenges. Finally, the future research on the ReRAM will be analyzed.&lt;/p&gt;</dct:description>
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