Journal article Open Access

Ultrathin Eu- and Er-Doped Y2O3 Films with Optimized Optical Properties for Quantum Technologies

Scarafagio, Marion; Tallaire, Alexandre; Tielrooij, Klaas-Jan; Cano, Daniel; Grishin, André; Chavanne, Marie-Hélène; Koppens, Frank H. L.; Ringuedé, Armelle; Cassir, Michel; Serrano, Diana; Goldner, Philippe; Ferrier, Alban


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    <subfield code="a">Koppens, Frank H. L.</subfield>
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    <subfield code="a">Serrano, Diana</subfield>
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    <subfield code="a">Scarafagio, Marion</subfield>
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    <subfield code="a">Ultrathin Eu- and Er-Doped Y2O3 Films with Optimized Optical Properties for Quantum Technologies</subfield>
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    <subfield code="a">Nanoscale Systems for Optical Quantum Technologies</subfield>
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    <subfield code="a">&lt;p&gt;Atomic layer deposited (ALD) Y2O3&amp;nbsp;thin&amp;nbsp;films have been thoroughly&lt;br&gt;
investigated for optical or electronic applications. The coherent spectroscopy of&lt;br&gt;
lanthanide ions doped into this material has also recently attracted increasing interest&lt;br&gt;
in the&amp;nbsp;field of quantum technologies for which they are considered promising candidates&lt;br&gt;
in quantum memories or as spin&amp;minus;photon interfaces. However, these most demanding&lt;br&gt;
applications require a deep control over the local positioning of the ions and their close&lt;br&gt;
environment in the crystalline matrix. This study focuses on the structural as well as&lt;br&gt;
optical properties of Eu3+&amp;nbsp;and Er3+&amp;nbsp;dopants in Y2O3&amp;nbsp;using photoluminescence (PL),&lt;br&gt;
luminescence decay times, and inhomogeneous line width (&amp;Gamma;inh) measurements within&lt;br&gt;
this particular context. While as-grown ALD&amp;nbsp;films do not provide an ideal host for the&lt;br&gt;
emitters, we demonstrate that by optimizing the deposition conditions and using&lt;br&gt;
appropriate annealing post treatments narrow inhomogeneous lines can be obtained for&lt;br&gt;
the&amp;nbsp;7F0&amp;nbsp;&amp;harr;&amp;nbsp;5D0&amp;nbsp;transition of Eu3+&amp;nbsp;even for nanoscale&amp;nbsp;films. Furthermore, about 1.5 ms&lt;br&gt;
lifetime has been measured for the infrared telecom transition of Er in ultrathin&amp;nbsp;films (&amp;lt;10 nm), which is an order of magnitude higher than in nanoparticles of the same size. These results validate optimized rare-earth-doped ALD Y2O3&amp;nbsp;films as a suitable platform for photonics applications where few-nanometer-thick&amp;nbsp;films with well-localized emitters are mandatory. This approach provides the&amp;nbsp;first building blocks toward the development of more complex devices for quantum sensing or hybrid structures coupled with other systems such as two-dimensional materials.&lt;/p&gt;</subfield>
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