June 17, 2019 Journal article Open Access

T. Mittmann; M. Materano; P. D. Lomenzo; M. H. Park; I. Stolichnov; M. Cavalieri; C. Zhou; J. L. Jones; T. Szyjka; M. Müller; A. Kersch; T. Mikolajick; U. Schroeder

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{
  "inLanguage": {
    "alternateName": "eng", 
    "@type": "Language", 
    "name": "English"
  }, 
  "description": "<p>Thin lm metal&ndash;insulator&ndash;metal capacitors with undoped HfO2&nbsp;as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The in uence of lm thickness and annealing temperature is characterized by electrical and structural methods. After annealing, the lms show distinct ferroelectric properties. Grazing incidence X-ray diffraction measurements reveal a dominant ferroelectric orthorhombic phase for thick- nesses in the 10&ndash;50 nm range and a negligible non-ferroelectric monoclinic phase fraction. Sputtering HfO2&nbsp;with additional oxygen during the deposition decreases the remanent polarization. Overall, the impact of oxygen vacancies and interstitials in the HfO2&nbsp;lm during deposition and annealing is correlated to the phase formation process.</p>", 
  "license": "https://creativecommons.org/licenses/by/4.0/legalcode", 
  "creator": [
    {
      "affiliation": "NaMLab gGmbH", 
      "@type": "Person", 
      "name": "T. Mittmann"
    }, 
    {
      "affiliation": "NaMLab gGmbH", 
      "@type": "Person", 
      "name": "M. Materano"
    }, 
    {
      "affiliation": "NaMLab gGmbH", 
      "@type": "Person", 
      "name": "P. D. Lomenzo"
    }, 
    {
      "affiliation": "Pusan National University", 
      "@type": "Person", 
      "name": "M. H. Park"
    }, 
    {
      "affiliation": "Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL)", 
      "@type": "Person", 
      "name": "I. Stolichnov"
    }, 
    {
      "affiliation": "Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL)", 
      "@type": "Person", 
      "name": "M. Cavalieri"
    }, 
    {
      "affiliation": "North Carolina State University", 
      "@type": "Person", 
      "name": "C. Zhou"
    }, 
    {
      "affiliation": "North Carolina State University", 
      "@type": "Person", 
      "name": "J. L. Jones"
    }, 
    {
      "affiliation": "Forschungszentrum J\u00fclich GmbH", 
      "@type": "Person", 
      "name": "T. Szyjka"
    }, 
    {
      "affiliation": "Forschungszentrum J\u00fclich GmbH", 
      "@type": "Person", 
      "name": "M. M\u00fcller"
    }, 
    {
      "affiliation": "Munich University of Applied Sciences", 
      "@type": "Person", 
      "name": "A. Kersch"
    }, 
    {
      "affiliation": "TU Dresden", 
      "@type": "Person", 
      "name": "T. Mikolajick"
    }, 
    {
      "affiliation": "NaMLab gGmbH", 
      "@type": "Person", 
      "name": "U. Schroeder"
    }
  ], 
  "headline": "Origin of ferroelectric phase in undoped HfO2 films deposited by sputtering", 
  "image": "https://zenodo.org/static/img/logos/zenodo-gradient-round.svg", 
  "datePublished": "2019-06-17", 
  "url": "https://zenodo.org/record/3247678", 
  "@context": "https://schema.org/", 
  "identifier": "https://doi.org/10.5281/zenodo.3247678", 
  "@id": "https://doi.org/10.5281/zenodo.3247678", 
  "@type": "ScholarlyArticle", 
  "name": "Origin of ferroelectric phase in undoped HfO2 films deposited by sputtering"
}