Giannis Giannoulis
Nikos Iliadis
Dimitrios Apostolopoulos
Paraskevas Bakopoulos
Ville-Markus Korpijärvi
Jaakko Mäkelä
Jukka Viheriälä
Mircea Guina
Hercules Avramopoulos
2016-03-24
<p>The temperature dependence of GaAs and InP SOA materials is investigated experimentally in this work. The direct comparison study verified that Dilute Nitrides are less temperature sensitive showing enhanced thermal stability on ASE spectrum and gain measurements in CW mode. Wavelength Conversion experiment at 10 Gb/s verified that GaAs SOA keeps up with the fast gain dynamics and the proper data processing at elevated temperatures while the performance of InP material is drastically degraded by heating the SOA device.</p>
https://doi.org/10.5281/zenodo.290540
oai:zenodo.org:290540
Zenodo
https://zenodo.org/communities/eu
https://doi.org/
info:eu-repo/semantics/openAccess
Creative Commons Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/legalcode
ICECS, International Conference: Electronics, Circuits, and Systems (ICECS), 2015, 6-9 Dec. 2015
1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation
info:eu-repo/semantics/conferencePaper