Conference paper Open Access
1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation
Giannis Giannoulis; Nikos Iliadis; Dimitrios Apostolopoulos; Paraskevas Bakopoulos; Ville-Markus Korpijärvi; Jaakko Mäkelä; Jukka Viheriälä; Mircea Guina; Hercules Avramopoulos
The temperature dependence of GaAs and InP SOA materials is investigated experimentally in this work. The direct comparison study verified that Dilute Nitrides are less temperature sensitive showing enhanced thermal stability on ASE spectrum and gain measurements in CW mode. Wavelength Conversion experiment at 10 Gb/s verified that GaAs SOA keeps up with the fast gain dynamics and the proper data processing at elevated temperatures while the performance of InP material is drastically degraded by heating the SOA device.
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1.55-ȝm Dilute Nitride SOAs with Low Temperature.pdf
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- Publication date:
- March 24, 2016
- DOI:
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- Grants:
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European Commission:
- NEPHELE - eNd to End scalable and dynamically reconfigurable oPtical arcHitecture for application-awarE SDN cLoud datacentErs (645212)
- Meeting:
- International Conference: Electronics, Circuits, and Systems (ICECS), 2015 (ICECS), 6-9 Dec. 2015
- License (for files):
- Creative Commons Attribution 4.0 International