Published March 24, 2016 | Version v1
Conference paper Open

1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation

Creators

  • 1. School of Electrical & Computer Engineering, National Technical University of Athens, Athens, Greece
  • 2. Optoelectronics Research Centre (ORC) Tampere University of Technology Tampere, Finland

Description

The temperature dependence of GaAs and InP SOA materials is investigated experimentally in this work. The direct comparison study verified that Dilute Nitrides are less temperature sensitive showing enhanced thermal stability on ASE spectrum and gain measurements in CW mode. Wavelength Conversion experiment at 10 Gb/s verified that GaAs SOA keeps up with the fast gain dynamics and the proper data processing at elevated temperatures while the performance of InP material is drastically degraded by heating the SOA device.

Files

1.55-ȝm Dilute Nitride SOAs with Low Temperature.pdf

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Additional details

Funding

NEPHELE – eNd to End scalable and dynamically reconfigurable oPtical arcHitecture for application-awarE SDN cLoud datacentErs 645212
European Commission