Journal article Open Access

Directional charge transport in layered, two‐dimensional triazine‐based graphitic carbon nitride

Noda, Yu; Merschjann, Christoph; Tarábek, Ján; Amsalem, Patrick; Koch, Norbert; Bojdys, Michael J.


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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Noda, Yu</dc:creator>
  <dc:creator>Merschjann, Christoph</dc:creator>
  <dc:creator>Tarábek, Ján</dc:creator>
  <dc:creator>Amsalem, Patrick</dc:creator>
  <dc:creator>Koch, Norbert</dc:creator>
  <dc:creator>Bojdys, Michael J.</dc:creator>
  <dc:date>2019-05-13</dc:date>
  <dc:description>Triazine‐based graphitic carbon nitride (TGCN) is the most recent addition to the family of graphene‐type, two‐dimensional and metal‐free materials. Although hailed as a promising low‐bandgap semiconductor for electronic applications, so far, only its structure and optical properties have been known. Here, we combine direction‐dependent electrical measurements and time‐resolved optical spectroscopy to determine macroscopic conductivity and microscopic charge carrier mobilities in this layered material “beyond graphene”. Electrical conductivity along the basal plane of TGCN is 65‐times lower than through the stacked layers; as opposed to graphite. Furthermore, we develop a model for this charge transport behavior based on observed carrier dynamics and random‐walk simulations. Our combined methods provide a path towards intrinsic charge transport in a direction‐dependent, layered semi‐conductor for applications in field‐effect transistors (FETs) and sensors.</dc:description>
  <dc:identifier>https://zenodo.org/record/2787253</dc:identifier>
  <dc:identifier>10.1002/anie.201902314</dc:identifier>
  <dc:identifier>oai:zenodo.org:2787253</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>info:eu-repo/grantAgreement/EC/H2020/678462/</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:subject>carbon nitride</dc:subject>
  <dc:subject>semiconductors</dc:subject>
  <dc:subject>thin films</dc:subject>
  <dc:subject>layered compounds</dc:subject>
  <dc:subject>2D materials</dc:subject>
  <dc:title>Directional charge transport in layered, two‐dimensional triazine‐based graphitic carbon nitride</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
</oai_dc:dc>
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