Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
Creators
- 1. National Centre for Scientific Research "Demokritos," 15310 Athens, Greece
- 2. National Institute for Materials Physics, 077125 Bucharest-Magurele, Romania
Description
Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x=0.5-0.7) on technologically important (100) Germanium (Ge) substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor capacitors (MFS) show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS with x=0.58 show very large remnant polarization up to 34.4 μC/cm2, or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at 2.3 MV/cm cycling field. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1T FeFET embedded nonvolatile memory cells with improved endurance.
Files
accepted_manuscript.pdf
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