Journal article Open Access
Zacharaki Christina; Tsipas Polychronis; Chaitoglou Stefanos; Fragkos Sotirios; Axiotis Michael; Lagoyiannis Anastasios; Negrea Raluca; Pintilie Lucian; Dimoulas Athanasios
Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x=0.5-0.7) on technologically important (100) Germanium (Ge) substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor capacitors (MFS) show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS with x=0.58 show very large remnant polarization up to 34.4 μC/cm2, or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at 2.3 MV/cm cycling field. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1T FeFET embedded nonvolatile memory cells with improved endurance.