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Published March 18, 2019 | Version v1
Journal article Open

Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

  • 1. National Centre for Scientific Research "Demokritos," 15310 Athens, Greece
  • 2. National Institute for Materials Physics, 077125 Bucharest-Magurele, Romania

Description

Plasma assisted atomic oxygen deposition was used to grow polycrystalline ferroelectric Hf1-xZrxO2 (x=0.5-0.7) on technologically important (100) Germanium (Ge) substrates showing sharp crystalline interfaces free of interfacial amorphous layers and strong evidence for the presence of a predominately orthorhombic phase. The electrical properties, evaluated using metal-ferroelectric-semiconductor capacitors (MFS) show symmetric and robust ferroelectric hysteresis with weak or no wake-up effects. The MFS with x=0.58 show very large remnant polarization up to 34.4 μC/cm2, or 30.6 μC/cm2 after correction for leakage and parasitics, combined with good endurance reaching 105 cycles at 2.3 MV/cm cycling field. The results show good prospects for the fabrication of Ge ferroelectric field effect transistors (FeFETs) for use in 1T FeFET embedded nonvolatile memory cells with improved endurance. 

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Funding

3eFERRO – Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2 780302
European Commission