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Control of Electron State Coupling in Asymmetric Ge/GeSi Quantum Wells

Ciano, Chiara; Virgilio, Michele; Montanari, Michele; Persichetti, Luca; Di Gaspare, Luciana; Ortolani, Michele; Baldassarre, Leonetta; Zoellner, Marvin H.; Skibitzki, Oliver; Scalari, Giacomo; Faist, Jerome; Paul, Douglas J.; Scuderi, Mario; Nicotra, Giuseppe; Grange, Thomas; Birner, Stefan; Capellini, Giovanni; De Seta, Monica


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  <dc:creator>Ciano, Chiara</dc:creator>
  <dc:creator>Virgilio, Michele</dc:creator>
  <dc:creator>Montanari, Michele</dc:creator>
  <dc:creator>Persichetti, Luca</dc:creator>
  <dc:creator>Di Gaspare, Luciana</dc:creator>
  <dc:creator>Ortolani, Michele</dc:creator>
  <dc:creator>Baldassarre, Leonetta</dc:creator>
  <dc:creator>Zoellner, Marvin H.</dc:creator>
  <dc:creator>Skibitzki, Oliver</dc:creator>
  <dc:creator>Scalari, Giacomo</dc:creator>
  <dc:creator>Faist, Jerome</dc:creator>
  <dc:creator>Paul, Douglas J.</dc:creator>
  <dc:creator>Scuderi, Mario</dc:creator>
  <dc:creator>Nicotra, Giuseppe</dc:creator>
  <dc:creator>Grange, Thomas</dc:creator>
  <dc:creator>Birner, Stefan</dc:creator>
  <dc:creator>Capellini, Giovanni</dc:creator>
  <dc:creator>De Seta, Monica</dc:creator>
  <dc:date>2018-12-16</dc:date>
  <dc:description>Theoretical predictions indicate that the n-type Ge/SiGe multi quantum-well system is the most promising material for the realization of a Si-compatible THz quantum cascade laser operating at room temperature. To advance in this direction, we study both experimentally and theoretically asymmetric coupled multi quantum-well samples based on this material system, that can be considered as the basic building block of a cascade architecture. Extensive structural characterization shows the high material quality of strain-symmetrized structures grown by chemical vapor deposition, down to the ultrathin barrier limit. Moreover, THz absorption spectroscopy measurements supported by theoretical modeling unambiguously demonstrate inter-well coupling and wavefunction tunneling. The agreement between experimental data and simulations allowed us to characterize the tunneling barrier parameters and, in turn, achieve a highly-controlled engineering of the electronic structure in forthcoming unipolar cascade systems based on n-type Ge/SiGe multi quantum-wells.</dc:description>
  <dc:identifier>https://zenodo.org/record/2319242</dc:identifier>
  <dc:identifier>10.5281/zenodo.2319242</dc:identifier>
  <dc:identifier>oai:zenodo.org:2319242</dc:identifier>
  <dc:relation>info:eu-repo/grantAgreement/EC/H2020/766719/</dc:relation>
  <dc:relation>doi:10.5281/zenodo.2319402</dc:relation>
  <dc:relation>doi:10.1103/PhysRevApplied.11.014003</dc:relation>
  <dc:relation>doi:10.5281/zenodo.2319241</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:source>Physical Review Applied 11 014003</dc:source>
  <dc:title>Control of Electron State Coupling in Asymmetric Ge/GeSi Quantum Wells</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
</oai_dc:dc>
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