December 6, 2018 Conference paper Open Access

Gianluca Timò

MARC21 XML Export

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    <subfield code="a">&lt;p&gt;The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic&lt;br&gt;
(CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult&lt;br&gt;
to be exploited for manufacturing 4-junction solar cells, in particular when III-V and IV elements are both used. So far,&lt;br&gt;
the integration of the 1 eV SiGeSn material in the lattice-matched InGaP/GaInAs/Ge triple-junction structure has&lt;br&gt;
required the utilization of two different growth apparatus, nearly losing the economic advantage of the monolithic&lt;br&gt;
architecture, owing to the related higher capital expenditure. The central technical challenge for realizing&lt;br&gt;
InGaP/GaInAs/SiGeSn/Ge solar cell at low cost, with an industrial approach, lies in the growth of III-V and IV elements&lt;br&gt;
in the same MOVPE equipment, by solving the &amp;ldquo;cross contamination&amp;rdquo; problem among the III-V elements and the IV&lt;br&gt;
elements. In this contribution, for the first time, the results of the investigation concerning the growth of SiGe(Sn) and&lt;br&gt;
III-V compounds in the same MOVPE growth chamber are presented. The epitaxial layers have been characterized by&lt;br&gt;
XRD, SEM, TEM, EDX, SIMS and ECV profiling. It is eventually shown that by starting from a modification of the&lt;br&gt;
MOVPE equipment and by setting up proper growth condition the contamination of III-V elements in IV based materials&lt;br&gt;
can be drastically reduced from 1020 cm-3 to 2*1017 cm-3, while the contamination of IV elements in III-V compounds can&lt;br&gt;
be reduced from 4-5*1017cm-3 to 6*1016 &amp;ndash; 3*1014 cm-3 depending on the substrate used.&lt;/p&gt;</subfield>
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    <subfield code="a">MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells</subfield>
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