Conference paper Open Access

MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells

Gianluca Timò


MARC21 XML Export

<?xml version='1.0' encoding='UTF-8'?>
<record xmlns="http://www.loc.gov/MARC21/slim">
  <leader>00000nam##2200000uu#4500</leader>
  <datafield tag="540" ind1=" " ind2=" ">
    <subfield code="u">https://creativecommons.org/licenses/by/4.0/legalcode</subfield>
    <subfield code="a">Creative Commons Attribution 4.0 International</subfield>
  </datafield>
  <datafield tag="260" ind1=" " ind2=" ">
    <subfield code="c">2018-12-06</subfield>
  </datafield>
  <controlfield tag="005">20200120173320.0</controlfield>
  <controlfield tag="001">2002067</controlfield>
  <datafield tag="909" ind1="C" ind2="O">
    <subfield code="p">openaire</subfield>
    <subfield code="o">oai:zenodo.org:2002067</subfield>
  </datafield>
  <datafield tag="520" ind1=" " ind2=" ">
    <subfield code="a">&lt;p&gt;The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic&lt;br&gt;
(CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult&lt;br&gt;
to be exploited for manufacturing 4-junction solar cells, in particular when III-V and IV elements are both used. So far,&lt;br&gt;
the integration of the 1 eV SiGeSn material in the lattice-matched InGaP/GaInAs/Ge triple-junction structure has&lt;br&gt;
required the utilization of two different growth apparatus, nearly losing the economic advantage of the monolithic&lt;br&gt;
architecture, owing to the related higher capital expenditure. The central technical challenge for realizing&lt;br&gt;
InGaP/GaInAs/SiGeSn/Ge solar cell at low cost, with an industrial approach, lies in the growth of III-V and IV elements&lt;br&gt;
in the same MOVPE equipment, by solving the &amp;ldquo;cross contamination&amp;rdquo; problem among the III-V elements and the IV&lt;br&gt;
elements. In this contribution, for the first time, the results of the investigation concerning the growth of SiGe(Sn) and&lt;br&gt;
III-V compounds in the same MOVPE growth chamber are presented. The epitaxial layers have been characterized by&lt;br&gt;
XRD, SEM, TEM, EDX, SIMS and ECV profiling. It is eventually shown that by starting from a modification of the&lt;br&gt;
MOVPE equipment and by setting up proper growth condition the contamination of III-V elements in IV based materials&lt;br&gt;
can be drastically reduced from 1020 cm-3 to 2*1017 cm-3, while the contamination of IV elements in III-V compounds can&lt;br&gt;
be reduced from 4-5*1017cm-3 to 6*1016 &amp;ndash; 3*1014 cm-3 depending on the substrate used.&lt;/p&gt;</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2=" ">
    <subfield code="s">1877125</subfield>
    <subfield code="z">md5:31639c74245e66e69f2e31b20a4f1a98</subfield>
    <subfield code="u">https://zenodo.org/record/2002067/files/CPV14_paper_published_timo.pdf</subfield>
  </datafield>
  <datafield tag="542" ind1=" " ind2=" ">
    <subfield code="l">open</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">publication</subfield>
    <subfield code="b">conferencepaper</subfield>
  </datafield>
  <datafield tag="100" ind1=" " ind2=" ">
    <subfield code="u">RSE</subfield>
    <subfield code="a">Gianluca Timò</subfield>
  </datafield>
  <datafield tag="041" ind1=" " ind2=" ">
    <subfield code="a">ang</subfield>
  </datafield>
  <datafield tag="653" ind1=" " ind2=" ">
    <subfield code="a">MOVPE</subfield>
  </datafield>
  <datafield tag="653" ind1=" " ind2=" ">
    <subfield code="a">Multi-juction solar cells</subfield>
  </datafield>
  <datafield tag="653" ind1=" " ind2=" ">
    <subfield code="a">SiGeSn</subfield>
  </datafield>
  <datafield tag="024" ind1=" " ind2=" ">
    <subfield code="a">10.1063/1.5053519</subfield>
    <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="245" ind1=" " ind2=" ">
    <subfield code="a">MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells</subfield>
  </datafield>
  <datafield tag="536" ind1=" " ind2=" ">
    <subfield code="c">640873</subfield>
    <subfield code="a">Concentrating Photovoltaic modules using advanced technologies and cells for highest efficiencies</subfield>
  </datafield>
  <datafield tag="650" ind1="1" ind2="7">
    <subfield code="a">cc-by</subfield>
    <subfield code="2">opendefinition.org</subfield>
  </datafield>
</record>
58
55
views
downloads
Views 58
Downloads 55
Data volume 103.2 MB
Unique views 54
Unique downloads 55

Share

Cite as