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MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells

Gianluca Timò


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{
  "inLanguage": {
    "alternateName": "ang", 
    "@type": "Language", 
    "name": "Old English (ca. 450-1100)"
  }, 
  "description": "<p>The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic<br>\n(CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult<br>\nto be exploited for manufacturing 4-junction solar cells, in particular when III-V and IV elements are both used. So far,<br>\nthe integration of the 1 eV SiGeSn material in the lattice-matched InGaP/GaInAs/Ge triple-junction structure has<br>\nrequired the utilization of two different growth apparatus, nearly losing the economic advantage of the monolithic<br>\narchitecture, owing to the related higher capital expenditure. The central technical challenge for realizing<br>\nInGaP/GaInAs/SiGeSn/Ge solar cell at low cost, with an industrial approach, lies in the growth of III-V and IV elements<br>\nin the same MOVPE equipment, by solving the &ldquo;cross contamination&rdquo; problem among the III-V elements and the IV<br>\nelements. In this contribution, for the first time, the results of the investigation concerning the growth of SiGe(Sn) and<br>\nIII-V compounds in the same MOVPE growth chamber are presented. The epitaxial layers have been characterized by<br>\nXRD, SEM, TEM, EDX, SIMS and ECV profiling. It is eventually shown that by starting from a modification of the<br>\nMOVPE equipment and by setting up proper growth condition the contamination of III-V elements in IV based materials<br>\ncan be drastically reduced from 1020 cm-3 to 2*1017 cm-3, while the contamination of IV elements in III-V compounds can<br>\nbe reduced from 4-5*1017cm-3 to 6*1016 &ndash; 3*1014 cm-3 depending on the substrate used.</p>", 
  "license": "https://creativecommons.org/licenses/by/4.0/legalcode", 
  "creator": [
    {
      "affiliation": "RSE", 
      "@type": "Person", 
      "name": "Gianluca Tim\u00f2"
    }
  ], 
  "headline": "MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells", 
  "image": "https://zenodo.org/static/img/logos/zenodo-gradient-round.svg", 
  "datePublished": "2018-12-06", 
  "url": "https://zenodo.org/record/2002067", 
  "keywords": [
    "MOVPE", 
    "Multi-juction solar cells", 
    "SiGeSn"
  ], 
  "@context": "https://schema.org/", 
  "identifier": "https://doi.org/10.1063/1.5053519", 
  "@id": "https://doi.org/10.1063/1.5053519", 
  "@type": "ScholarlyArticle", 
  "name": "MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells"
}
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