Conference paper Open Access

MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells

Gianluca Timò


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  <identifier identifierType="URL">https://zenodo.org/record/2002067</identifier>
  <creators>
    <creator>
      <creatorName>Gianluca Timò</creatorName>
      <affiliation>RSE</affiliation>
    </creator>
  </creators>
  <titles>
    <title>MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells</title>
  </titles>
  <publisher>Zenodo</publisher>
  <publicationYear>2018</publicationYear>
  <subjects>
    <subject>MOVPE</subject>
    <subject>Multi-juction solar cells</subject>
    <subject>SiGeSn</subject>
  </subjects>
  <dates>
    <date dateType="Issued">2018-12-06</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Conference paper</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://zenodo.org/record/2002067</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1063/1.5053519</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="https://creativecommons.org/licenses/by/4.0/legalcode">Creative Commons Attribution 4.0 International</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic&lt;br&gt;
(CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult&lt;br&gt;
to be exploited for manufacturing 4-junction solar cells, in particular when III-V and IV elements are both used. So far,&lt;br&gt;
the integration of the 1 eV SiGeSn material in the lattice-matched InGaP/GaInAs/Ge triple-junction structure has&lt;br&gt;
required the utilization of two different growth apparatus, nearly losing the economic advantage of the monolithic&lt;br&gt;
architecture, owing to the related higher capital expenditure. The central technical challenge for realizing&lt;br&gt;
InGaP/GaInAs/SiGeSn/Ge solar cell at low cost, with an industrial approach, lies in the growth of III-V and IV elements&lt;br&gt;
in the same MOVPE equipment, by solving the &amp;ldquo;cross contamination&amp;rdquo; problem among the III-V elements and the IV&lt;br&gt;
elements. In this contribution, for the first time, the results of the investigation concerning the growth of SiGe(Sn) and&lt;br&gt;
III-V compounds in the same MOVPE growth chamber are presented. The epitaxial layers have been characterized by&lt;br&gt;
XRD, SEM, TEM, EDX, SIMS and ECV profiling. It is eventually shown that by starting from a modification of the&lt;br&gt;
MOVPE equipment and by setting up proper growth condition the contamination of III-V elements in IV based materials&lt;br&gt;
can be drastically reduced from 1020 cm-3 to 2*1017 cm-3, while the contamination of IV elements in III-V compounds can&lt;br&gt;
be reduced from 4-5*1017cm-3 to 6*1016 &amp;ndash; 3*1014 cm-3 depending on the substrate used.&lt;/p&gt;</description>
  </descriptions>
  <fundingReferences>
    <fundingReference>
      <funderName>European Commission</funderName>
      <funderIdentifier funderIdentifierType="Crossref Funder ID">10.13039/501100000780</funderIdentifier>
      <awardNumber awardURI="info:eu-repo/grantAgreement/EC/H2020/640873/">640873</awardNumber>
      <awardTitle>Concentrating Photovoltaic modules using advanced technologies and cells for highest efficiencies</awardTitle>
    </fundingReference>
  </fundingReferences>
</resource>
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