December 6, 2018 Conference paper Open Access

Gianluca Timò

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{
  "DOI": "10.1063/1.5053519", 
  "language": "ang", 
  "title": "MOVPE SiGeSn Development for the Next Generation Four Junction Solar Cells", 
  "issued": {
    "date-parts": [
      [
        2018, 
        12, 
        6
      ]
    ]
  }, 
  "abstract": "<p>The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic<br>\n(CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult<br>\nto be exploited for manufacturing 4-junction solar cells, in particular when III-V and IV elements are both used. So far,<br>\nthe integration of the 1 eV SiGeSn material in the lattice-matched InGaP/GaInAs/Ge triple-junction structure has<br>\nrequired the utilization of two different growth apparatus, nearly losing the economic advantage of the monolithic<br>\narchitecture, owing to the related higher capital expenditure. The central technical challenge for realizing<br>\nInGaP/GaInAs/SiGeSn/Ge solar cell at low cost, with an industrial approach, lies in the growth of III-V and IV elements<br>\nin the same MOVPE equipment, by solving the &ldquo;cross contamination&rdquo; problem among the III-V elements and the IV<br>\nelements. In this contribution, for the first time, the results of the investigation concerning the growth of SiGe(Sn) and<br>\nIII-V compounds in the same MOVPE growth chamber are presented. The epitaxial layers have been characterized by<br>\nXRD, SEM, TEM, EDX, SIMS and ECV profiling. It is eventually shown that by starting from a modification of the<br>\nMOVPE equipment and by setting up proper growth condition the contamination of III-V elements in IV based materials<br>\ncan be drastically reduced from 1020 cm-3 to 2*1017 cm-3, while the contamination of IV elements in III-V compounds can<br>\nbe reduced from 4-5*1017cm-3 to 6*1016 &ndash; 3*1014 cm-3 depending on the substrate used.</p>", 
  "author": [
    {
      "family": "Gianluca Tim\u00f2"
    }
  ], 
  "type": "paper-conference", 
  "id": "2002067"
}