Quantification of layer composition in compound semiconductors

Compound semiconductors are the key underpinning technology in optoelectronics, and also used in electronic applications with specialist requirements. Here we analyse novel SPLED structures to characterise Al content. Using conventional depth profiling methods with Shard stepwise rotation we were able to depth-profile a full device. The Al content was seen to agree with expected compositions for the different layers, providing vital information for modelling the performance of cell structures.