10.5281/zenodo.1089575
https://zenodo.org/records/1089575
oai:zenodo.org:1089575
A. Hamdoune
A. Hamdoune
M. Abdelmoumene
M. Abdelmoumene
A. Hamroun
A. Hamroun
Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT
Zenodo
2013
n-GaN/AlGaN/GaN HEMT
drain-source current (IDS)
transconductance (gm)
cut-off frequency (fT)
maximum oscillation frequency (fmax).
2013-11-06
eng
10.5281/zenodo.1089574
https://zenodo.org/communities/waset
9996851
Creative Commons Attribution 4.0 International
The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.
We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.