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Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.
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" } ], "resource_type": { "id": "publication-article", "title": { "de": "Zeitschriftenartikel", "en": "Journal article" } }, "rights": [ { "description": { "en": "The Creative Commons Attribution license allows re-distribution and re-use of a licensed work on the condition that the creator is appropriately credited." }, "icon": "cc-by-icon", "id": "cc-by-4.0", "props": { "scheme": "spdx", "url": "https://creativecommons.org/licenses/by/4.0/legalcode" }, "title": { "en": "Creative Commons Attribution 4.0 International" } } ], "subjects": [ { "subject": "Nanoscale Devices" }, { "subject": "SOI MOSFET" }, { "subject": "Analytical Model" }, { "subject": "Electron Transport." } ], "title": "A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices", "version": "17367" }, "parent": { "access": { "owned_by": { "user": 32148 } }, "communities": { "default": "a59dd046-9a86-4a47-97ce-b51f1bb8fc3f", "entries": [ { "access": { "member_policy": "open", "members_visibility": "public", "record_policy": "open", "review_policy": "open", "visibility": "public" }, "children": { "allow": false }, "created": "2017-05-31T21:24:26.028360+00:00", "custom_fields": {}, "deletion_status": { "is_deleted": false, "status": "P" }, "id": "a59dd046-9a86-4a47-97ce-b51f1bb8fc3f", "links": {}, "metadata": { "curation_policy": "", "description": "", "page": "", "title": "World Academy of Science, Engineering and Technology" }, "revision_id": 0, "slug": "waset", "updated": "2017-11-15T12:37:31.935319+00:00" } ], "ids": [ "a59dd046-9a86-4a47-97ce-b51f1bb8fc3f" ] }, "id": "1088905", "pids": { "doi": { "client": "datacite", "identifier": "10.5281/zenodo.1088905", "provider": "datacite" } } }, "pids": { "doi": { "client": "datacite", "identifier": "10.5281/zenodo.1088906", "provider": "datacite" }, "oai": { "identifier": "oai:zenodo.org:1088906", "provider": "oai" } }, "revision_id": 5, "stats": { "all_versions": { "data_volume": 8684478.0, "downloads": 18, "unique_downloads": 17, "unique_views": 52, "views": 52 }, "this_version": { "data_volume": 8684478.0, "downloads": 18, "unique_downloads": 17, "unique_views": 52, "views": 52 } }, "status": "published", "updated": "2020-01-20T14:45:05.147176+00:00", "versions": { "index": 1, "is_latest": true } }