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MoOX and WOX based hole-selective contacts for wafer-based Si solar cells

Essig, Stephanie; Dréon, Julie; Werner, Jérémie; Löper, Philipp; De Wolf, Stefaan; Boccard, Mathieu; Ballif, Christophe


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  <dc:creator>Essig, Stephanie</dc:creator>
  <dc:creator>Dréon, Julie</dc:creator>
  <dc:creator>Werner, Jérémie</dc:creator>
  <dc:creator>Löper, Philipp</dc:creator>
  <dc:creator>De Wolf, Stefaan</dc:creator>
  <dc:creator>Boccard, Mathieu</dc:creator>
  <dc:creator>Ballif, Christophe</dc:creator>
  <dc:date>2017-12-05</dc:date>
  <dc:description>Highly-transparent carrier-selective front contacts open a pathway towards entirely dopant free Si solar cells. Hole selective a-Si:H/MoOx/ITO front contact stacks were already successfully applied in such novel devices. However, for optimum device performance, further improvements are required: We evaluate the use of the high-work-function material WOX as a replacement for MoOx in an attempt to reduce optical absorption losses. In addition, we investigate the use of thin hydrogenated SiOX instead of a-Si:H, and the impact of the residual pressure for MoOx evaporation.</dc:description>
  <dc:identifier>https://zenodo.org/record/1087464</dc:identifier>
  <dc:identifier>10.5281/zenodo.1087464</dc:identifier>
  <dc:identifier>oai:zenodo.org:1087464</dc:identifier>
  <dc:relation>info:eu-repo/grantAgreement/EC/H2020/706744/</dc:relation>
  <dc:relation>info:eu-repo/grantAgreement/EC/H2020/727529/</dc:relation>
  <dc:relation>doi:10.5281/zenodo.1087463</dc:relation>
  <dc:relation>url:https://zenodo.org/communities/disc-h2020</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:title>MoOX and WOX based hole-selective contacts for wafer-based Si solar cells</dc:title>
  <dc:type>info:eu-repo/semantics/conferencePaper</dc:type>
  <dc:type>publication-conferencepaper</dc:type>
</oai_dc:dc>
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