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Conference paper Open Access

A SiGe High Gain and Highly Linear F-Band Single-Balanced Subharmonic Mixer

Seyedhosseinzadeh, Neda; Nabavi, Abdolreza; Carpenter, Sona; He, Zhongxia Simon; Bao, Mingquan; Zirath, Herbert

A compact, broadband, high gain, second-order active down-converter subharmonic mixer is demonstrated using a 130-nm SiGe BiCMOS technology. The mixer adopts a bottom-LO Gilbert topology, on-chip RF and LO baluns and two emitter-follower buffers to realize a high gain wideband operation in both RF and IF frequencies. The measured performance exhibits a flat conversion gain (CG) of about 11 dB from 90 to 130 GHz with an average LO power of +3 dBm and high 2LO-RF isolation better than 60 dB. The mixer shows an input 1-dB compression point of -16 dBm consuming a dc power of only 40 mW. The chip dimension is 0.4 mm2, including probing pads. It demonstrates also up to 12 GHz 3-dB IF bandwidth, which to the authors’ knowledge, is the highest obtained among active mixers operating above 100 GHz

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