Bao, Mingquan
He, Zhongxia Simon
Zirath, Herbert
2017-10-08
<p>A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and measured. This PA has an output power of 12.5 – 15.5 dBm in a frequency range from 100 GHz to 145 GHz, when the input power is about 2 dBm. The small signal gain is 19 dB and the maximum DC power consumption is 480 mW with a supply voltage of 1.87 V. The peak power added efficiency (PAE) is 6.4% in D-band. T-junctions are utilized to combine and divide millimeter-wave power. To reduce the PA’s loss and chip area, neither a Wilkinson power combiner/divider nor a balun is applied. The chip size is 0.53 mm2.</p>
https://doi.org/10.5281/zenodo.1041325
oai:zenodo.org:1041325
eng
Zenodo
https://zenodo.org/communities/m3tera
https://zenodo.org/communities/eu
https://doi.org/10.5281/zenodo.1041324
info:eu-repo/semantics/openAccess
Creative Commons Attribution 4.0 International
https://creativecommons.org/licenses/by/4.0/legalcode
EuMW 2017, European Micrwave Week 2017, Nürnberg/Germany, 8-13 October 2017
D-band
Power amplifier
SiGe
BiCMOS
A 100-145 GHz Area-Efficient Power Amplifier in a 130 nm SiGe Technology
info:eu-repo/semantics/conferencePaper